A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar
Abstract: A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f/sub T/, 0.25 /spl mu/m-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier ...
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