As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...
Samsung Electronics has announced that its second-generation 10nm FinFET process technology, 10LPP (Low Power Plus), has been qualified and is ready for production. With further enhancement in 3D ...
Mentor Graphics partnered with TSMC to add a spectrum of new capabilities for their mutual customers' adoption of 10nm FinFET technology. The new capabilities include advanced double patterning, DRC ...
Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
TSMC and Global Foundries have already announced their plans for 14nm and 16nm FinFET chips, that they should start building in 2014, and then we’ll probably see them no sooner than 2015, which is ...
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China's Semiconductor Manufacturing International (SMIC) has kicked off volume production of 14nm FinFET chips, and plans to move a newer 12nm FinFET process to risk production by the end of 2019, ...
Samsung isn’t all about smartphone as the world’s top smartphone vendor also has interests in electronics, display panels, and semiconductor manufacture. Samsung is even a leading name in advanced ...
Imec recently unveiled strained Germanium devices based on a silicon-replacement process, a first according to the research center. The process involves growing a Ge/SiGe quantum-well heterostructure ...
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